Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeproizvodiIndustrijski pribor za pametni modulDDR3 UDIMM specifikacije memorijskog modula

DDR3 UDIMM specifikacije memorijskog modula

Način plaćanja:
L/C,T/T,D/A
Inkoterm:
FOB,EXW,CIF
Min. Narudžba:
1 Piece/Pieces
transport:
Ocean,Air,Express,Land
  • Opis proizvoda
Overview
Atributi proizvoda

Model br.NSO4GU3AB

Sposobnost opskrbe i dodatne informacije

transportOcean,Air,Express,Land

Način plaćanjaL/C,T/T,D/A

InkotermFOB,EXW,CIF

Pakiranje i dostava
Prodajne jedinice:
Piece/Pieces

4GB 1600MHz 240-PIN DDR3 UDIMM


Revizijska povijest

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tablica za naručivanje

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Opis
HENGSTAR UNBUFFED DDR3 SDRAM DIMMS (Nepopunjeni dvostruki sinkroni Sinkroni DRAM DRAM DUAL U-line memorijski moduli) su malu snagu, memorijski moduli velike brzine koji koriste DDR3 SDRAM uređaje. NS04GU3AB je 512m x 64-bitna dva ranga 4GB DDR3-1600 CL11 1.5V SDRAM UNBUFFEDIR DIMM proizvod, na temelju šesnaest 256m x 8-bitnih FBGA komponenti. SPD je programiran na Jedec Standard Latenter DDR3-1600 vrijeme od 11-11-11 na 1,5 V. Svaki 240-pinski DIMM koristi zlatne kontaktne prste. SDRAM UNBUFFED DIMM namijenjen je upotrebi kao glavnoj memoriji kada je instaliran u sustavima kao što su PCS i radne stanice.


Značajke
Power Supply: vdd = 1,5V (1,425V do 1,575V)
VDDQ = 1,5V (1,425V do 1,575V)
800MHz FCK za 1600MB/sec/pin
8 Nezavisna interna banka
 Programirajuća latencija CAS -a: 11, 10, 9, 8, 7, 6
 Programirajuća aditivna latencija: 0, Cl - 2 ili Cl - 1 sat
8-bitni pred-izrada
 Burst duljina: 8 (isprepletanje bez ikakvog ograničenja, sekvencijalno s početnom adresom samo "000"), 4 s tccd = 4 što ne dopušta bešavno čitanje ili pisanje [bilo u letu pomoću A12 ili MRS]
BI-direktivni diferencijalni podaci strobo
 Internalno (samo) kalibracija; Unutarnja samo -kalibracija kroz ZQ PIN (RZQ: 240 OHM ± 1%)
 Pomoću prestanka pomoću ODT PIN -a
 Prosječno razdoblje osvježavanja 7,8US na nižoj od tkase 85 ° C, 3,9US na 85 ° C <tCase <95 ° C
Asynhrono resetiranje
 Snažna snaga pogona podataka
FLY-by Topologija
PCB: Visina 1.18 ”(30 mm)
Rohs kompatibilan i bez halogena


Ključni parametri vremena

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tablica adresa

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Opisi

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Napomene : Tablica s opisom PIN -a u nastavku je sveobuhvatan popis svih mogućih igara za sve DDR3 module. Sve navedene igle svibnja ne biti podržan na ovom modulu. Pogledajte PIN zadatke za informacije specifične za ovaj modul.


Funkcionalni blok dijagram

4GB, 512mx64 modul (2Rank od x8)

1


2


Bilješka:
1. ZQ kugla na svakoj komponentu DDR3 spojena je na vanjski otpornik od 240Ω ± 1% koji je vezan za zemlju. Koristi se za kalibraciju komponentovog pokretača za raskid i izlaz.



Dimenzije modula


Pogled sprijeda

3

Pogled sprijeda

4

Bilješke:
1. Sve dimenzije su u milimetrima (inčima); Max/min ili tipično (tipi) gdje je navedeno.
2.Tolerancija na svim dimenzijama ± 0,15 mm ako nije drugačije navedeno.
3. Dimenzionalni dijagram je samo za referencu.

Kategorije proizvoda : Industrijski pribor za pametni modul

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